Proton induced dark count rate degradation in 150-nm CMOS single-photon avalanche diodes
Abstract
Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- December 2019
- DOI:
- 10.1016/j.nima.2019.162722
- arXiv:
- arXiv:2208.01109
- Bibcode:
- 2019NIMPA.94762722C
- Keywords:
-
- Single-photon avalanche diode (SPAD);
- CMOS;
- Radiation effects;
- Displacement damage;
- Dark count rate (DCR);
- Random telegraph signal (RTS);
- Annealing;
- Space radiation environment;
- SPENVIS;
- Physics - Instrumentation and Detectors
- E-Print:
- This is an author-created, un-copyedited version of an article accepted for publication/published in Nuclear Instruments and Methods in Physics Research Section A. The Version of Record is available online at https://doi.org/10.1016/j.nima.2019.162722