Spin-orbit coupling and electron scattering in high-quality InSb1 −xAsx quantum wells

InSb_{1 −x}As_x is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to its large effective g -factor and enhanced spin-orbit coupling when compared to binary InSb and InAs. Much remains to be understood concerning the fundamental properties of the two-dimensional electron gas (2DEG) in InSbAs quantum wells. We report on the electrical properties of a series of 30 nm InSb_{1 −x}As_x quantum wells grown 40 nm below the surface with three different arsenic mole fractions, x = 0.05, 0.13, and 0.19. The dependencies of mobility on 2DEG density and arsenic mole fraction are analyzed. For the x =0.05 sample, the 2DEG displays a peak mobility μ =2.4 ×10⁵cm² /Vs at a density of n =2.5 ×10¹¹cm⁻² . High mobility, small effective mass, and strong spin-orbit coupling result in beating in the Shubnikov de Haas oscillations at low magnetic field. Fourier analysis of the Shubnikov de Haas oscillations facilitates extraction of the Rashba spin-orbit parameter α as a function of 2DEG density and quantum well mole fraction. For x =0.19 at n =3.1 ×10¹¹ cm ⁻², α ≈300 meVÅ, among the highest reported values in III-V materials.