Oxygen vacancy formation and electronic reconstruction in strained LaNiO3 and LaNiO3/LaAlO3 superlattices

By using density functional theory calculations including a Coulomb repulsion term, we explore the formation of oxygen vacancies and their impact on the electronic and magnetic properties of strained bulk LaNiO₃ and (LaNiO₃)₁ /(LaAlO₃)₁ (001) superlattices. For bulk LaNiO₃, we find that epitaxial strain induces a substantial anisotropy in the oxygen vacancy formation energy. In particular, tensile strain promotes the selective reduction of apical oxygen, which may explain why the recently observed superconductivity in infinite-layer nickelates is limited to strained films. For (LaNiO₃)₁ /(LaAlO₃)₁ (001) superlattices, the simulations reveal that the NiO₂ layer is most prone to vacancy formation, whereas the AlO₂ layer exhibits generally the highest formation energies. The reduction is consistently endothermic, and a largely repulsive vacancy-vacancy interaction is identified as a function of the vacancy concentration. The released electrons are accommodated exclusively in the NiO₂ layer, reducing the vacancy formation energy in the AlO₂ layer by ∼70 % with respect to bulk LaAlO₃. By varying the vacancy concentration from 0 to 8.3 % in the NiO₂ layer at tensile strain, we observe an unexpected transition from a localized site-disproportionated (0.5 % ) to a delocalized (2.1 % ) charge accommodation, a reentrant site disproportionation leading to a metal-to-insulator transition despite a half-filled majority-spin Ni e_g manifold (4.2 % ), and finally a magnetic phase transition (8.3 % ). While a band gap of up to 0.5 eV opens at 4.2 % for compressive strain, it is smaller for tensile strain or the system is metallic, which is in sharp contrast to the defect-free superlattice. The strong interplay of electronic reconstructions and structural modifications induced by oxygen vacancies in this system highlights the key role of an explicit supercell treatment beyond rigid-band methods and exemplifies the complex response to defects in artificial transition metal oxides.