Extrinsic tunnel Hall effect in MgO-based tunnel junctions
Abstract
The Hall effect that occurs when current flows through a CoFeB/MgO/NM (NM =Pt ,Ta) tunnel junction is investigated. It is shown that the transverse voltage in NM electrodes is nonlinear on a DC voltage applied to the tunnel junction. It has both linear (odd) and quadratic (even) parts with respect to electric field. The linear part contains well-known contributions of the anomalous Hall effect in the ferromagnetic electrode, inverse spin-hall effect in NM, and others. The quadratic part is a phenomenon caused by the spin-orbit scattering of electrons in an external electric field induced by a voltage applied to the barrier. This field reaches values of 109 V/m, which is close to internal atomic fields. The magnitude of both effects decreases as the thickness of the NM electrode is increased due to shunting effects.
- Publication:
-
Physical Review B
- Pub Date:
- December 2022
- DOI:
- 10.1103/PhysRevB.106.L220408
- arXiv:
- arXiv:2206.10264
- Bibcode:
- 2022PhRvB.106v0408P
- Keywords:
-
- Condensed Matter - Other Condensed Matter;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 5 figures