Scattering anisotropy in HgTe (013) quantum well
Abstract
We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions [ 100 ] and [ 03 1 ¯ ] as the electron density function n. The anisotropy is absent at the minimal electron density near a charge neutrality point. The anisotropy increases with the increase in n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase in the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason for such a strong change in the anisotropy remains unknown.
- Publication:
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Applied Physics Letters
- Pub Date:
- August 2022
- DOI:
- 10.1063/5.0101932
- arXiv:
- arXiv:2206.00306
- Bibcode:
- 2022ApPhL.121h3101K
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 5 figures, published in Applied Physics Letters