Hafnia for analog memristor: Influence of stoichiometry and crystalline structure

The highly nonlinear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. The theoretical understanding of its switching mechanism has been focused on the processes of conductive filament (CF) generation and rupture, but the possible phase transition and crystallization around the region of CFs due to the variation of O content have been less studied or understood. In this paper, HfO_x structural models covering the full stoichiometries from Hf to HfO₂ are established, and the crystal structure evolution during the reduction process of hafnia is obtained through first-principles calculation. The electronic structures and O vacancy migration characteristics of these structures are analyzed. A criterion is prescribed to predict the mode of abrupt binary switching or gradual conductance modulation according to the structure evolution of the CFs. In particular, factors that influence the merging of tiny conductive channels into strong CFs are discussed intensively, including the anisotropy of O vacancy migration and the size effect. The feasibility of Mg doping to achieve robust gradual switching is discussed.