Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain, and Layer Engineering

In this work, the energy band alignments of heterostructures of 2D materials are studied, where these are crucial for various device applications. Using density functional theory (DFT), we consider heterostructures of black phosphorus (BP) with transition metal dichalcogenides [MX₂, where M = molybdenum (Mo), tungsten (W), or hafnium (Hf), and X = sulfide (S) or selenide (Se)] and, specifically, the effects of charge redistribution and associated electrostatic fields on the band alignments beyond the electron affinity rule, as well as band tunability via applied layer-normal electric fields, applied strain, and layer engineering in BP/MoS₂. BP is a material with high mobility and mechanical flexibility, and is also sensitive to the number of BP layers. Absent such tuning, calculations for BP combined with the more electronegative materials result in a staggered (type II) alignment for MoS₂, and a broken gap (type III) alignment for HfSe₂ and HfS₂. Calculation for BP with less electronegative materials, WSe₂, MoSe₂, and WS₂ materials, results in straddling (type I) alignment, with a direct gap for WSe₂ and MoSe₂, and an indirect gap for WS₂. The amount of charge redistribution between layers and associated variations from the electron affinity rule increase going from type I to type II to type III, where the band alignment becomes significantly pinned in the latter case by the creation of mobile charge carriers. With such tuning, these band alignments can then be altered quantitatively and qualitatively.