Ultrasharp Lateral p-n Junctions in Modulation-Doped Graphene
Abstract
We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $\alpha$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $\alpha$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $\alpha$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $\alpha$-RuCl$_3$ flake.
- Publication:
-
Nano Letters
- Pub Date:
- May 2022
- DOI:
- 10.1021/acs.nanolett.2c00785
- arXiv:
- arXiv:2203.06295
- Bibcode:
- 2022NanoL..22.4124B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1021/acs.nanolett.2c00785