Optical characterization of deuterated silicon-rich nitride waveguides
Abstract
Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized, and we experimentally confirm that the silicon-rich nitride films grown with SiD4 eliminates Si-H and N-H related absorption. The performance of identical waveguides for films grown with SiH4 and SiD4 are compared demonstrating a 2 dB/cm improvement in line with that observed in literature. Waveguides fabricated on the SRN:D film are further shown to possess a nonlinear parameter of 95 W−1 m−1, with the film exhibiting a linear and nonlinear refractive index of 2.46 and 9.8 ×? 10-18 m2W−1 respectively.
- Publication:
-
Scientific Reports
- Pub Date:
- July 2022
- DOI:
- 10.1038/s41598-022-16889-7
- arXiv:
- arXiv:2202.10023
- Bibcode:
- 2022NatSR..1212697C
- Keywords:
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- Physics - Optics;
- Physics - Applied Physics
- E-Print:
- 12 pages, 5 figures