Uniaxial strain-induced electronic property alterations of MoS2 monolayer
Abstract
Molybdenum disulfide (MoS2) has attracted interests owing to its strain-tuned electronic and optical properties, making it a promising candidate for applications in strain engineering devices. In this study, we investigate the effect of uniaxial strain on the electronic properties of MoS2 monolayer using first-principles calculations. Results show that a crossover of the K-K direct to Γ-K indirect bandgap transitions occurs at a strain of 1.743%. Moreover, a strong correlation is observed between the modified bandgap and the density of states (DOS) of the Mo-4d and S-3p orbitals at the valence band maximum and conduction band minimum. The uniaxial strain-tuned interatomic distance along the a-crystallographic axis not only alters the bandgap at different rates but also affects the DOS of the Mo-4d orbital and possible electronic transitions. This study clarifies the mechanism of the electronic structural modification of two-dimensional MoS2 monolayer, which may affect intervalley transitions.
- Publication:
-
Advances in Natural Sciences: Nanoscience and Nanotechnology
- Pub Date:
- December 2021
- DOI:
- 10.1088/2043-6262/ac4aed
- arXiv:
- arXiv:2201.00500
- Bibcode:
- 2021ANSNN..12d5016S
- Keywords:
-
- MoS2;
- electronic properties;
- uniaxial strain;
- electronic band structure;
- density of states;
- 3.02;
- 4.13;
- 5.05;
- Condensed Matter - Materials Science
- E-Print:
- 12 pages, 4 figures