Quantitative infrared near-field imaging of suspended topological insulator nanostructures
Abstract
The development of nanoscale solid-state devices exploiting the promising topological surface states of topological insulator materials requires careful device engineering and improved materials quality. For instance, the introduction of a substrate, device contact or the formation of oxide layers can cause unintentional doping of the material, spoiling the sought-after properties. In support of this, nanoscale imaging tools can provide useful materials information without the need for complex device fabrication. Here we study Bi$_2$Se$_3$ nanoribbons suspended across multiple material stacks of SiO$_2$ and Au using infrared scattering scanning near-field optical microscopy. We validate our observations against a multilayer finite dipole model to obtain quantitative imaging of the local Bi$_2$Se$_3$ properties that vary depending on the local environment. Moreover, we identify experimental signatures that we associate with quantum well states at the Bi$_2$Se$_3$ surfaces. Our approach opens a new direction for future engineering of nanoelectronic devices based on topological insulator materials.
- Publication:
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arXiv e-prints
- Pub Date:
- December 2021
- DOI:
- 10.48550/arXiv.2112.10104
- arXiv:
- arXiv:2112.10104
- Bibcode:
- 2021arXiv211210104L
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Physics - Optics