Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor
Abstract
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.
- Publication:
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arXiv e-prints
- Pub Date:
- December 2021
- DOI:
- 10.48550/arXiv.2112.06805
- arXiv:
- arXiv:2112.06805
- Bibcode:
- 2021arXiv211206805G
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 34 pages, 14 figures