Dirac-source diode with sub-unity ideality factor
Abstract
An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power rectifier, able to overcome the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode based on graphene/MoS2/graphite van der Waals heterostructures, which exhibits a steep-slope characteristic curve, by exploiting the linear density of states (DOSs) of graphene. For the developed DS diode, we obtained η < 1 for more than four decades of drain current (ηave_4dec < 1) with a minimum value of 0.8, and a rectifying ratio exceeding 108. The realisation of a DS diode represents an additional step towards the development of low-power electronic circuits.
- Publication:
-
Nature Communications
- Pub Date:
- July 2022
- DOI:
- 10.1038/s41467-022-31849-5
- arXiv:
- arXiv:2112.00924
- Bibcode:
- 2022NatCo..13.4328M
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 28 pages, 14 figures, submitted to Nature Communications