Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering
Abstract
Upgraded metallurgical-grade (UMG) Si is obtained via a purification route alternative to the one used for conventional polysilicon and with significantly reduced environmental impact. Additionally, despite a lower purity level in the feedstock than polysilicon, UMG-Si has demonstrated potential for the fabrication of highly efficient and low-cost solar cells. Low initial bulk carrier lifetimes recorded in UMG-Si bare wafers can be improved by means of an adequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si. In this letter, optimized PDG processes for UMG-Si are reported, resulting in increased values between 20 and 250 times the original carrier lifetimes and record figures above 645 us.
- Publication:
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arXiv e-prints
- Pub Date:
- November 2021
- DOI:
- 10.48550/arXiv.2111.13522
- arXiv:
- arXiv:2111.13522
- Bibcode:
- 2021arXiv211113522D
- Keywords:
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- Condensed Matter - Materials Science;
- Physics - Applied Physics
- E-Print:
- 11 pages, 3 figures. arXiv admin note: text overlap with arXiv:2106.15926