Thin films of the α ?-quartz S ixG e1 -xO2 ? solid solution
Abstract
S i O2 ? with the α ?-quartz structure is one of the most popular piezoelectrics. It is widely used in crystal oscillators, bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, and so on. G e O2 ? can also be crystallized into the α ?-quartz structure and it has better piezoelectric properties, with higher piezoelectric coefficient and electromechanical coupling coefficients, than S i O2 ?. Experiments on bulk crystals and theoretical studies have shown that these properties can be tuned by varying the Si/Ge ratio in the S ixG e1 -xO2 ? solid solution. However, to the best of our knowledge, thin films of S ixG e1 -xO2 ? quartz have never been reported. Here we present the successful crystallization of S ixG e1 -xO2 ? thin films in the α ?-quartz phase on quartz substrates (S i O2 ?) with x up to 0.75. Generally, the films grow semi-epitaxially, with the same orientation as the substrates. Interestingly, the S i0.75G e0.25O2 ? composition grows fully strained by the quartz substrates and this leads to the formation of circular quartz domains with an ordered Dauphiné twin structure. These studies represent a first step towards the optimization of piezoelectric quartz thin films for high frequency (> 5 GHz) applications.
- Publication:
-
Scientific Reports
- Pub Date:
- 2022
- DOI:
- 10.1038/s41598-022-05595-z
- arXiv:
- arXiv:2109.12890
- Bibcode:
- 2022NatSR..12.2010Z
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 12 pages, 10 figures