Doping controlled Fano resonance in bilayer 1T$ ^{\prime} $-ReS$ _{2} $: Raman experiments and first-principles theoretical analysis
Abstract
In the bilayer ReS$ _{2} $ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth of the in-plane vibrational modes, leaving out-of-plane vibrational modes unaffected. Largest change is observed for the in-plane Raman mode at $\sim$ 151 cm$^{-1} $, which also shows doping induced Fano resonance with the Fano parameter 1/q = -0.17 at doping concentration of $\sim 3.7\times10^{13}$ cm$^{-2} $. A quantitative understanding of our results is provided by first-principles density functional theory (DFT), showing that the electron-phonon coupling (EPC) of in-plane modes is stronger than that of out-of-plane modes, and its variation with doping is independent of the layer stacking. The origin of large EPC is traced to 1T to 1T$ ^{\prime} $ structural phase transition of ReS$ _{2} $ involving in-plane displacement of atoms whose instability is driven by the nested Fermi surface of the 1T structure. Results are also compared with the isostructural trilayer ReSe$ _{2} $.
- Publication:
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arXiv e-prints
- Pub Date:
- September 2021
- DOI:
- 10.48550/arXiv.2109.00478
- arXiv:
- arXiv:2109.00478
- Bibcode:
- 2021arXiv210900478D
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Nanoscale, 2021,13, 1248-1256