Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning
Abstract
Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies are imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear voltage dependent partial polarization switching of a ferroelectric field effect transistor to mimic plasticity characteristics of biological synapses. We provide experimental measurements of the synaptic characteristics for a 28 nm high-k metal gate technology based device and develop an experimentally calibrated device model for large-scale system performance prediction. Decoupled read-write paths, ultra-low programming energies, and the possibility of arranging such devices in a cross-point architecture demonstrate the synaptic efficacy of the device. Our hardware-algorithm co-design analysis reveals that the intrinsic plasticity of the ferroelectric devices has potential to enable unsupervised local learning in edge devices with limited training data.
- Publication:
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Applied Physics Letters
- Pub Date:
- September 2021
- DOI:
- 10.1063/5.0064860
- arXiv:
- arXiv:2107.13088
- Bibcode:
- 2021ApPhL.119m3701S
- Keywords:
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- Computer Science - Emerging Technologies
- E-Print:
- doi:10.1063/5.0064860