Microscopic origin of the high thermoelectric figure of merit of n -doped SnSe

Excellent thermoelectric performance in the out-of-layer n -doped SnSe has been observed experimentally [Chang et al., Science 360, 778 (2018), 10.1126/science.aaq1479]. However, a first-principles investigation of the dominant scattering mechanisms governing all thermoelectric transport properties is lacking. In the present paper, by applying extensive first-principles calculations of electron-phonon coupling associated with parameterized calculation of the scattering by ionized impurities, we investigate the reasons behind the superior figure of merit as well as the enhancement of z T above 600 K in n -doped out-of-layer SnSe, as compared to p -doped SnSe with similar carrier densities. For the n -doped case, the relaxation time is dominated by ionized impurity scattering and increases with temperature, a feature that maintains the power factor at high values at higher temperatures and simultaneously causes the carrier thermal conductivity at zero electric current (κ_el) to decrease faster for higher temperatures, leading to an ultrahigh-z T =3.1 at 807 K. We rationalize the roles played by κ_el and κ⁰ (the thermal conductivity due to carrier transport under isoelectrochemical conditions) in the determination of z T . Our results show the ratio between κ⁰ and the lattice thermal conductivity indeed corresponds to the upper limit for z T , whereas the difference between calculated z T and the upper limit is proportional to κ_el.