Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision
Abstract
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is 63 ±10 % for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.
- Publication:
-
Physical Review Applied
- Pub Date:
- November 2021
- DOI:
- 10.1103/PhysRevApplied.16.054037
- arXiv:
- arXiv:2105.12074
- Bibcode:
- 2021PhRvP..16e4037I
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 20 pages, 13 figures