Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon
Abstract
Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.
- Publication:
-
Journal of Instrumentation
- Pub Date:
- August 2021
- DOI:
- 10.1088/1748-0221/16/08/P08002
- arXiv:
- arXiv:2104.07997
- Bibcode:
- 2021JInst..16P8002W
- Keywords:
-
- Photon detectors for UV;
- visible and IR photons (solid-state) (PIN diodes;
- APDs;
- Si-PMTs;
- G-APDs;
- CCDs;
- EBCCDs;
- EMCCDs;
- CMOS imagers;
- etc);
- visible and IR photons (solid-state);
- Physics - Instrumentation and Detectors
- E-Print:
- 18 pages, 11 figures