Manipulation and readout of spin states of a single-molecule magnet by a spin-polarized current
Abstract
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the two spin states of stored information of the SMM that characterized by the maximum and minimum average values of the Z-component of the total spin of the SMM and the conduction-electron. We demonstrate that the switching time depends on both the sequential tunneling gap and the spin-selection-rule allowed transition-energy, which can be tuned by the gate voltage. In particular, when the external bias voltage is turned off, in the cases of the unoccupied and doubly-occupied ground eigenstates, the time derivative of the transport current can be used to read out the two spin states of stored information of the SMM. Moreover, the strength and the asymmetry of the SMM-electrode coupling have a strong influence on the switching time, but that have a slight influence on the readout time. Our results provide fundamental insight into the electrical controllable manipulation and readout of the two spin states of stored information of the SMM.
- Publication:
-
Physica E Low-Dimensional Systems and Nanostructures
- Pub Date:
- April 2022
- DOI:
- 10.1016/j.physe.2021.115086
- arXiv:
- arXiv:2104.07192
- Bibcode:
- 2022PhyE..13815086X
- Keywords:
-
- Single-molecule magnet;
- Manipulation and readout of spin states;
- Single-molecule memory device;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 15 pages, 10 figures