Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2-MoSe2 Interface
Abstract
The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure ${\text{MoS}_{2}-\text{MoSe}_{2}}$ to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved Kerr and reflectivity spectroscopies, we find that the photoexcited carriers conserve their spin for both tunneling directions across the interface. Following this, we measure dramatically different spin/valley depolarization rates for electrons and holes, $\sim 30\,{\text{ns}}^{-1}$ and $< 1\,{\text{ns}}^{-1}$, respectively and show that this difference relates to the disparity in the spin-orbit splitting in conduction and valence bands of TMDs. Our work provides insights into the spin/valley dynamics of free carriers unaffected by complex excitonic processes and establishes TMD heterostructures as generators of spin currents in spin/valleytronic devices.
- Publication:
-
Nano Letters
- Pub Date:
- September 2021
- DOI:
- 10.1021/acs.nanolett.1c01538
- arXiv:
- arXiv:2103.09934
- Bibcode:
- 2021NanoL..21.7123K
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 15 + 6 pages