Metal-insulator transition in n -type bulk crystals and films of strongly compensated SrTiO3

We start by analyzing experimental data of Spinelli et al. [Phys. Rev. B 81, 155110 (2010), 10.1103/PhysRevB.81.155110] for the conductivity of n -type bulk crystals of SrTiO₃ (STO) with broad electron concentration n range of 4 ×10¹⁵ -4 ×10²⁰cm⁻³ , at low temperatures. We obtain a good fit of the conductivity data, σ (n ) , by the Drude formula for n ≥n_c≃3 ×10¹⁶cm⁻³ assuming that used for doping insulating STO bulk crystals are strongly compensated and the total concentration of background charged impurities is N =10¹⁹cm⁻³ . At n <n_c , the conductivity collapses with decreasing n and the Drude theory fit fails. We argue that this is the metal-insulator transition (MIT) in spite of the very large Bohr radius of hydrogenlike donor state a_B≃700 nm with which the Mott criterion of MIT for a weakly compensated semiconductor, n a_B³≃0.02 , predicts 10⁵ times smaller n_c. We try to explain this discrepancy in the framework of the theory of the percolation MIT in a strongly compensated semiconductor with the same N =10¹⁹cm⁻³ . In the second part of this paper, we develop the percolation MIT theory for films of strongly compensated semiconductors. We apply this theory to doped STO films with thickness d ≤130 nm and calculate the critical MIT concentration n_c(d ) . We find that, for doped STO films on insulating STO bulk crystals, n_c(d ) grows with decreasing d . Remarkably, STO films in a low dielectric constant environment have the same n_c(d ) . This happens due to the Rytova-Keldysh modification of a charge impurity potential which allows a larger number of the film charged impurities to contribute to the random potential.