Tuning the Mode Splitting of a Semiconductor Microcavity with Uniaxial Stress
Abstract
A splitting of the fundamental optical modes in micro- and nanocavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays a role in light-matter interaction and hence quantum technology applications, a method for controlling the mode splitting is useful. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating a n -i -p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode splitting as a function of wavelength across the stopband. We demonstrate a reversible in situ technique to tune the mode splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of approximately 11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode splitting and its tuning across the stopband leads to a quantitative understanding of the mechanism behind the results.
- Publication:
-
Physical Review Applied
- Pub Date:
- May 2021
- DOI:
- 10.1103/PhysRevApplied.15.054061
- arXiv:
- arXiv:2102.09327
- Bibcode:
- 2021PhRvP..15e4061T
- Keywords:
-
- Physics - Optics;
- Condensed Matter - Materials Science;
- Physics - Applied Physics;
- Quantum Physics
- E-Print:
- 7 pages, 5 figures