Im{χ(3)} spectra of 110-cut GaAs, GaP, and Si near the two-photon absorption band edge
Abstract
Spectra of the degenerate two-photon absorption coefficient β ( ω ), anisotropy parameter σ ( ω ), and dichroism parameter δ ( ω ) = [ σ ( ω ) + 2 η ( ω ) ] / 2 of crystalline 110-cut GaAs, GaP, and Si, at 300 K were measured using femtosecond pump-probe modulation spectroscopy over an excitation range in the vicinity of each material's half-bandgap E g / 2 (overall 0.62 < ℏ ω < 1.91 eV or 2000 > λ > 650 nm). Together, these three parameters completely characterize the three independent components of the imaginary part of the degenerate third-order nonlinear optical susceptibility tensor Im { χa b c d ( 3 ) ( ω ) }. In direct-gap GaAs, these components peak at ℏ ω ≈ 0.78 E g, which is close to the peak at ℏ ω = 0.71 E g predicted by the Jones-Reiss phenomenological model. The dispersion is comparable with ab initio calculations. In indirect-gap GaP and Si, these components tend to increase with ℏ ω over our tuning range. In Si, the dispersion differs significantly from predictions of semi-empirical models, and ab initio calculations do not account for transitions below the two-photon direct bandgap, motivating further investigation. Kleinman symmetry was observed to be broken in all three materials. We also note anomalies observed and their possible origins, emphasizing the advantages of a 2-beam experiment in identifying the contribution of various nonlinear effects.
- Publication:
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Journal of Applied Physics
- Pub Date:
- May 2021
- DOI:
- 10.1063/5.0047478
- arXiv:
- arXiv:2102.07072
- Bibcode:
- 2021JAP...129r3109F
- Keywords:
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- Condensed Matter - Materials Science;
- Physics - Optics
- E-Print:
- 62 pages, 63 figures, 86 references. The following article has been accepted by J. Appl. Phys. After it is published, it will be found at https://aip.scitation.org/journal/jap