Quantum conductors formation and resistive switching memory effects in zirconia nanotubes
Abstract
The prospects of the development of non-volatile memory elements that involve memristive metal-dielectric-metal sandwich structures are due to the possibility of reliably implementing sustained functional states with quantized conductance. In the present paper, we have explored the properties of Zr/ZrO2/Au memristors fabricated based on an anodic zirconia layer that consists of an ordered array of vertically oriented non-stoichiometric nanotubes with an outer diameter of 30 nm. The operational stability of the designed memory devices has been analyzed in unipolar and bipolar resistive switching modes. The resistance ratio ≥105 between high-resistance (HRS) and low-resistance (LRS) states has been evaluated. It has been found that the LRS conductivity is quantized over a wide range with a fundamental minimum of 0.5G 0 = 38.74 μS due to the formation of quantum conductors based on oxygen vacancies (VO). For Zr/ZrO2/Au memristors, resistive switching mechanisms to be sensitive to the migration of VO in an applied electric field have been proposed. It has been shown that the ohmic type and space-charge-limited conductivities are realized in the LRS and HRS, respectively. Besides, we have offered a brief review of parameters for functional metal/zirconia/metal nanolayered structures to create effective memristors with multiple resistive states and a high resistance ratio.
- Publication:
-
Nanotechnology
- Pub Date:
- February 2022
- DOI:
- 10.1088/1361-6528/ac2e22
- arXiv:
- arXiv:2102.03764
- Bibcode:
- 2022Nanot..33g5208V
- Keywords:
-
- ZrO2;
- memristor;
- quantum conductive filaments;
- resistance state;
- oxygen vacancies;
- Condensed Matter - Materials Science
- E-Print:
- 24 pages, 8 figures, 1 table, 78 references