Moderate-temperature near-field thermophotovoltaic systems with thin-film InSb cells
Abstract
Near-field thermophotovoltaic systems functioning at 400$\sim$900~K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb $p$-$n$ junctions are investigated theoretically. The performances of two near-field systems with different emitters are examined carefully. One near-field system consists of a graphene-hexagonal-boron-nitride-graphene sandwich structure as the emitter, while the other system has an emitter made of the double graphene-hexagonal-boron-nitride heterostructure. It is shown that both systems exhibit higher output power density and energy efficiency than the near-field system based on mono graphene-hexagonal-boron-nitride heterostructure. The optimal output power density of the former device can reach to $1.3\times10^{5}~\rm{W\cdot m^{-2}}$, while the optimal energy efficiency can be as large as $42\%$ of the Carnot efficiency. We analyze the underlying physical mechanisms that lead to the excellent performances of the proposed near-field thermophotovoltaic systems. Our results are valuable toward high-performance moderate temperature thermophotovoltaic systems as appealing thermal-to-electric energy conversion (waste heat harvesting) devices.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2021
- DOI:
- 10.48550/arXiv.2101.10604
- arXiv:
- arXiv:2101.10604
- Bibcode:
- 2021arXiv210110604W
- Keywords:
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- Physics - Applied Physics;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 15 pages, 7 figures