Gate-tunable quantum anomalous Hall effects in MnBi2Te4 thin films
Abstract
The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like Mn Bi2Te4 . Here we point out that the QAH gaps of these IMTIs can be optimized and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the ∼10 meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schrödinger-Poisson self-consistent-field equations.
- Publication:
-
Physical Review Materials
- Pub Date:
- May 2021
- DOI:
- 10.1103/PhysRevMaterials.5.L051201
- arXiv:
- arXiv:2101.07181
- Bibcode:
- 2021PhRvM...5e1201L
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 13 pages, 3+6 figures