Design of an Enhanced Reconfigurable Chaotic Oscillator using G4FET-NDR Based Discrete Map
Abstract
In this paper, a novel chaotic map is introduced usinga voltage controlled negative differential resistance (NDR) circuitcomposed of ann-channel and ap-channel silicon-on-insulator(SOI) four-gate transistor (G4FET). The multiple gates of theG4FET are leveraged to create a discrete chaotic map with threebifurcation parameters. The three tunable parameters are thegain of a transimpedance amplifier (TIA), top-gate voltage ofn-channel G4FET, and top-gate voltage ofp-channel G4FET. Twomethods are proposed for building chaotic oscillators using thisdiscrete map. The effect of altering bifurcation parameters onchaotic operation is illustrated using bifurcation diagrams andLyapunov exponent. A design methodology for building flexibleand reconfigurable logic gate is outlined and the consequentenhancement in functionality space caused by the existence ofthree independent bifurcation parameters is demonstrated andcompared with previous work.
- Publication:
-
arXiv e-prints
- Pub Date:
- January 2021
- DOI:
- arXiv:
- arXiv:2101.00334
- Bibcode:
- 2021arXiv210100334S
- Keywords:
-
- Electrical Engineering and Systems Science - Systems and Control
- E-Print:
- This paper is accepted and presented in '14TH IEEE DALLAS CIRCUITS AND SYSTEMS CONFERENCE', November 16, 2020. The name of the paper can be found in conference schedule: https://engineering.utdallas.edu/DCAS/schedule.html