The statistics of electron-hole avalanches
Abstract
Charge multiplication through avalanche processes is commonly employed in the detection of single photons or charged particles in high-energy physics and beyond. In this report, we provide a detailed discussion of the properties of avalanches driven by two species of charge carriers, e.g. electrons and holes in a semiconductor exposed to an electric field. We derive equations that describe the general case of avalanches developing in position-dependent electric fields and give their analytical solutions for constant fields. We discuss consequences for the time resolution achievable with detectors that operate above the breakdown limit, e.g. single-photon avalanche diodes (SPADs) and silicon photomultipliers (SiPMs). Our results also describe avalanches that achieve finite gain and are important for avalanche photodiodes (APDs) and low-gain avalanche detectors (LGADs).
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- July 2021
- DOI:
- 10.1016/j.nima.2021.165327
- arXiv:
- arXiv:2012.11285
- Bibcode:
- 2021NIMPA100365327W
- Keywords:
-
- Electron-hole avalanche;
- Semiconductor;
- SPAD;
- SiPM;
- Time resolution;
- Precision timing;
- Physics - Instrumentation and Detectors
- E-Print:
- Nucl. Instrum. Meth. A, 1003, 165327 (2021)