A singlet-triplet hole spin qubit in planar Ge
Abstract
Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits are particularly interesting owing to their ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 μs, which we extend beyond 150 μs using echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the-art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are comparable with those of Ge single spin qubits, but singlet-triplet qubits can be operated at much lower fields, emphasizing their potential for on-chip integration with superconducting technologies.
- Publication:
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Nature Materials
- Pub Date:
- June 2021
- DOI:
- 10.1038/s41563-021-01022-2
- arXiv:
- arXiv:2011.13755
- Bibcode:
- 2021NatMa..20.1106J
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- doi:10.1038/s41563-021-01022-2