Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Abstract
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
- Publication:
-
arXiv e-prints
- Pub Date:
- October 2020
- DOI:
- 10.48550/arXiv.2010.14985
- arXiv:
- arXiv:2010.14985
- Bibcode:
- 2020arXiv201014985P
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 19 pages, 5 figures, to be published at New J. Phys