Bounds and Code Constructions for Partially Defect Memory Cells
Abstract
This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for masking such partially stuck cells while additionally correcting errors. This construction (for cells with $q >2$ levels) is achieved by generalizing an existing masking-only construction in [1] (based on binary codes) to correct errors as well. Compared to previous constructions in [2], our new construction achieves larger rates for many sets of parameters. Second, we derive a sphere-packing (any number of $u$ partially stuck cells) and a Gilbert-Varshamov bound ($u<q$ partially stuck cells) for codes that can mask a certain number of partially stuck cells and correct errors additionally. A numerical comparison between the new bounds and our previous construction of PSMCs for the case $u<q$ in [2] shows that our construction lies above the Gilbert-Varshamov-like bound for several code parameters.
- Publication:
-
arXiv e-prints
- Pub Date:
- September 2020
- DOI:
- 10.48550/arXiv.2009.06512
- arXiv:
- arXiv:2009.06512
- Bibcode:
- 2020arXiv200906512A
- Keywords:
-
- Computer Science - Information Theory;
- Computer Science - Data Structures and Algorithms
- E-Print:
- 6 pages, 3 theorems, code construction, sphere-packing-like bound, 2 figures, Gilbert-Varshamov-like bound, 4 figures, Seventeenth International Workshop on Algebraic and Combinatorial Coding Theory Acct 2020, October 11-17, 2020, Bulgaria