Overdoping Graphene Beyond the van Hove Singularity
Abstract
At very high doping levels the van Hove singularity in the π* band of graphene becomes occupied and exotic ground states possibly emerge, driven by many-body interactions. Employing a combination of ytterbium intercalation and potassium adsorption, we n dope epitaxial graphene on silicon carbide past the π* van Hove singularity, up to a charge carrier density of 5.5 ×1014 cm-2 . This regime marks the unambiguous completion of a Lifshitz transition in which the Fermi surface topology has evolved from two electron pockets into a giant hole pocket. Angle-resolved photoelectron spectroscopy confirms these changes to be driven by electronic structure renormalizations rather than a rigid band shift. Our results open up the previously unreachable beyond-van-Hove regime in the phase diagram of epitaxial graphene, thereby accessing an unexplored landscape of potential exotic phases in this prototype two-dimensional material.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 2020
- DOI:
- 10.1103/PhysRevLett.125.176403
- arXiv:
- arXiv:2009.04876
- Bibcode:
- 2020PhRvL.125q6403R
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 6 pages, 2 figures