Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
Abstract
We report the growth of CuMnSb thin films by molecular beam epitaxy on InAs (001) substrates. The CuMnSb layers are compressively strained (0.6 %) due to lattice mismatch. The thin films have a ω full width at half-maximum of 7.7 arcsec according to high resolution x-ray diffraction, and a root-mean-square roughness of 0.14 nm as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of 62 K, a Curie-Weiss temperature of -65 K, and an effective moment of 5.9 μB/f .u . Transport measurements confirm the antiferromagnetic transition and show a residual resistivity at 4 K of 35 μ Ω cm.
- Publication:
-
Physical Review Materials
- Pub Date:
- November 2020
- DOI:
- 10.1103/PhysRevMaterials.4.114402
- arXiv:
- arXiv:2009.00342
- Bibcode:
- 2020PhRvM...4k4402S
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 6 pages, 5 figures, accepted in PRM