Resistivity saturation in Kondo insulators
Abstract
Resistivities of heavy-fermion insulators typically saturate below a characteristic temperature T*. For some, metallic surface states, potentially from a non-trivial bulk topology, are a likely source of residual conduction. Here, we establish an alternative mechanism: at low temperature, in addition to the charge gap, the scattering rate turns into a relevant energy scale, invalidating the semi-classical Boltzmann picture. Then, finite lifetimes of intrinsic carriers drive residual conduction, impose the existence of a crossover T*, and control—now on par with the gap—the quantum regime emerging below it. Assisted by realistic many-body simulations, we showcase the mechanism for the Kondo insulator Ce3Bi4Pt3, for which residual conduction is a bulk property, and elucidate how its saturation regime evolves under external pressure and varying disorder. Deriving a phenomenological formula for the quantum regime, we also unriddle the ill-understood bulk conductivity of SmB6—demonstrating a wide applicability of our mechanism in correlated narrow-gap semiconductors.
- Publication:
-
Communications Physics
- Pub Date:
- December 2021
- DOI:
- 10.1038/s42005-021-00723-z
- arXiv:
- arXiv:2008.05846
- Bibcode:
- 2021CmPhy...4..226P
- Keywords:
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- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- 8 pages, 6 figures