Optical visualization of the enhanced spin Hall effect in bismuth doped silicon
Abstract
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.
- Publication:
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arXiv e-prints
- Pub Date:
- June 2020
- DOI:
- 10.48550/arXiv.2006.01443
- arXiv:
- arXiv:2006.01443
- Bibcode:
- 2020arXiv200601443N
- Keywords:
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- Condensed Matter - Materials Science