Topological quantum control: Edge currents via Floquet depinning of skyrmions in the ν =0 graphene quantum Hall antiferromagnet
Abstract
We propose a defect-to-edge topological quantum quench protocol that can efficiently inject electric charge from defect-core states into a chiral edge current of an induced Chern insulator. The initial state of the system is assumed to be a Mott insulator, with electrons bound to topological defects that are pinned by disorder. We show that a "critical quench" to a Chern insulator mass of the order of the Mott gap shunts charge from defects to the edge, while a second stronger quench can trap it there and boost the edge velocity, creating a controllable current. We apply this idea to a skyrmion charge in the ν =0 quantum Hall antiferromagnet in graphene, where the quench into the Chern insulator could be accomplished via Floquet driving with circularly polarized light.
- Publication:
-
Physical Review B
- Pub Date:
- June 2020
- DOI:
- 10.1103/PhysRevB.101.241403
- arXiv:
- arXiv:2003.06828
- Bibcode:
- 2020PhRvB.101x1403I
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Statistical Mechanics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 6 pages including refs, 4 figures