Extraordinary magnetoresistance in encapsulated monolayer graphene devices
Abstract
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride having metallic edge contacts and a central metal shunt. Extremely large EMR values, M R = ( R ( B ) - R 0 ) / R 0 ∼ 10 5 , are achieved in part because R0 approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, dR/dB, which in two-terminal measurements is the highest yet reported for EMR devices and in particular exceeds previous results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of pn-junctions at the graphene-metal shunt interface.
- Publication:
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Applied Physics Letters
- Pub Date:
- February 2020
- DOI:
- 10.1063/1.5142021
- arXiv:
- arXiv:2002.01123
- Bibcode:
- 2020ApPhL.116e3102Z
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Appl. Phys. Lett. 116, 053102 (2020)