Deep Learning Enabled Strain Mapping of Single-Atom Defects in Two-Dimensional Transition Metal Dichalcogenides with Sub-Picometer Precision
Abstract
2D materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so-far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe$_{2-2x}$Te$_{2x}$. We utilize deep learning to mine large datasets of aberration-corrected scanning transmission electron microscopy images to locate and classify point defects. By combining hundreds of images of nominally identical defects, we generate high signal-to-noise class-averages which allow us to measure 2D atomic coordinates with up to 0.3 pm precision. Our methods reveal that Se vacancies introduce complex, oscillating strain fields in the WSe$_{2-2x}$Te$_{2x}$ lattice which cannot be explained by continuum elastic theory. These results indicate the potential impact of computer vision for the development of high-precision electron microscopy methods for beam-sensitive materials.
- Publication:
-
Nano Letters
- Pub Date:
- May 2020
- DOI:
- 10.1021/acs.nanolett.0c00269
- arXiv:
- arXiv:2001.08233
- Bibcode:
- 2020NanoL..20.3369L
- Keywords:
-
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- All authors are from University of Illinois at Urbana-Champaign. 41 pages, 5 figures, 6 supplementary figures, and supplementary information