Attosecond-fast internal photoemission
Abstract
The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission1-3. Here an electron is photoemitted from a metal into a semiconductor4,5. While the photoelectric effect takes place within less than 100 attoseconds (1 as = 10-18 seconds)6,7, the attosecond timescale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON—CHAMELEON—we show that the atomically thin semimetal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300 ± 200) as. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz (1 PHz = 1015 Hz) for the charge transfer rate, this semimetal/semiconductor interface represents a functional solid-state interface offering the speed and design space required for future light-wave signal processing.
- Publication:
-
Nature Photonics
- Pub Date:
- January 2020
- DOI:
- 10.1038/s41566-019-0580-6
- arXiv:
- arXiv:2001.02989
- Bibcode:
- 2020NaPho..14..219H
- Keywords:
-
- Physics - Applied Physics;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1038/s41566-019-0580-6