Solid-state qubits integrated with superconducting through-silicon vias
Abstract
As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays—provided they are compact enough to support densely-packed qubit systems without compromising qubit performance or low-loss signal and control routing. In this work, we demonstrate the integration of superconducting, high-aspect ratio TSVs—10 μm wide by 20 μm long by 200 μm deep—with superconducting qubits. We utilize TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture. We also validate the fabrication of qubits directly upon the surface of a TSV-integrated chip. These key 3D-integration milestones pave the way for the control and readout of high-density superconducting qubit arrays using superconducting TSVs.
- Publication:
-
npj Quantum Information
- Pub Date:
- July 2020
- DOI:
- 10.1038/s41534-020-00289-8
- arXiv:
- arXiv:1912.10942
- Bibcode:
- 2020npjQI...6...59Y
- Keywords:
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- Quantum Physics;
- Physics - Applied Physics
- E-Print:
- 8 pages