Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
Abstract
Many challenges faced in today's semiconductor devices are related to self-heating phenomena. The optimization of device designs can be assisted by numerical simulations using the non-isothermal drift-diffusion system, where the magnitude of the thermoelectric cross effects is controlled by the Seebeck coefficient. We show that the model equations take a remarkably simple form when assuming the so-called Kelvin formula for the Seebeck coefficient. The corresponding heat generation rate involves exactly the three classically known self-heating effects, namely Joule, recombination and Thomson-Peltier heating, without any further (transient) contributions. Moreover, the thermal driving force in the electrical current density expressions can be entirely absorbed in the diffusion coefficient via a generalized Einstein relation. The efficient numerical simulation relies on an accurate and robust discretization technique for the fluxes (finite volume Scharfetter-Gummel method), which allows to cope with the typically stiff solutions of the semiconductor device equations. We derive two non-isothermal generalizations of the Scharfetter-Gummel scheme for degenerate semiconductors (Fermi-Dirac statistics) obeying the Kelvin formula. The approaches differ in the treatment of degeneration effects: The first is based on an approximation of the discrete generalized Einstein relation implying a specifically modified thermal voltage, whereas the second scheme follows the conventionally used approach employing a modified electric field. We present a detailed analysis and comparison of both schemes, indicating a superior performance of the modified thermal voltage scheme.
- Publication:
-
Journal of Computational Physics
- Pub Date:
- February 2020
- DOI:
- 10.1016/j.jcp.2019.109091
- arXiv:
- arXiv:1911.00377
- Bibcode:
- 2020JCoPh.40209091K
- Keywords:
-
- Finite volume Scharfetter-Gummel method;
- Semiconductor device simulation;
- Electro-thermal transport;
- Non-isothermal drift-diffusion system;
- Degenerate semiconductors (Fermi-Dirac statistics);
- Seebeck coefficient;
- Physics - Applied Physics;
- Condensed Matter - Other Condensed Matter;
- Mathematics - Numerical Analysis;
- Physics - Computational Physics;
- 35K57;
- 35Q79;
- 65N08;
- 80A20;
- G.1.8;
- J.2;
- J.6
- E-Print:
- 26 pages, 7 figures