Quantum-mechanical effect in atomically thin MoS2 FET
Abstract
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the typical thickness of ~5 nm for Si-on-insulator (SOI), the advantage of the ultimate thickness limit of monolayer for the device performance has not been fully proved yet, especially for the on-state at the accumulation region. Here, we present much stronger quantum-mechanical effect at the accumulation region based on the C-V analysis for top-gate MoS2 FETs. The self-consistent calculation elucidated that the electrons are confined in the monolayer thickness, unlike in the triangle potential formed by the electric field for SOI, the gate-channel capacitance is ideally maximized to the gate insulator capacitance since the capacitive contribution of the channel can be neglected due to the negligible channel thickness. This quantum-mechanical effect agreed well with the experimental results. Therefore, monolayer 2D channels are suggested to be used to enhance the on-current as well as the gate modulation ability.
- Publication:
-
2D Materials
- Pub Date:
- January 2020
- DOI:
- 10.1088/2053-1583/ab42c0
- arXiv:
- arXiv:1910.00295
- Bibcode:
- 2020TDM.....7a4001F
- Keywords:
-
- capacitance–voltage measurement;
- accumulation capacitance;
- quantum-mechanical effect;
- subband;
- Physics - Applied Physics;
- Condensed Matter - Materials Science
- E-Print:
- 2D mater. 2020, 7, 014001