Berry curvature engineering by gating two-dimensional antiferromagnets
Abstract
Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi2Te4 thin films. Under an out-of-plane electric field that breaks PT symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi2Te4 thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototypes for future AFM spintronic applications.
- Publication:
-
Physical Review Research
- Pub Date:
- May 2020
- DOI:
- 10.1103/PhysRevResearch.2.022025
- arXiv:
- arXiv:1909.01194
- Bibcode:
- 2020PhRvR...2b2025D
- Keywords:
-
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 7 pages, 4 figures