Investigation of resistive switching and transport mechanisms of Al2O3/TiO2-x memristors under cryogenic conditions (1.5 K)
Abstract
Resistive switching and transport mechanisms of Al2O3/TiO2-x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. We report successful resistive switching of our devices in the temperature range of 300-1.5 K. The current-voltage curves exhibit negative differential resistance effects between 130 K and 1.5 K, attributed to a metal-insulator transition of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated with an ION/IOFF diode ratio of 84 at 1.5 K, paving the way for selector-free cryogenic passive crossbars. Temperature-dependent thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in a low resistance state, suggesting hopping-type conduction mechanisms. Finally, the transport mechanism analysis at 1.5 K indicates that for all resistance states, the conduction follows the space-charge limited current model in low fields, whereas trap-assisted tunneling dominates in higher fields.
- Publication:
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AIP Advances
- Pub Date:
- February 2020
- DOI:
- 10.1063/1.5140994
- arXiv:
- arXiv:1908.05545
- Bibcode:
- 2020AIPA...10b5305B
- Keywords:
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- Physics - Applied Physics;
- Computer Science - Emerging Technologies
- E-Print:
- 4 pages, 4 figures, IEEE 14th Nanotechnology Materials &