Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase change memory devices

We model electrical conductivity in metastable amorphous Ge₂Sb₂Te₅ (GST) using independent contributions from temperature and electric field to simulate phase change memory devices and ovonic threshold switches. 3D, 2D-rotational, and 2D finite element simulations of pillar cells capture threshold switching and show filamentary conduction in the on-state. The model can be tuned to capture switching fields from ∼5 to 40 MV/m at room temperature using the temperature dependent electrical conductivity measured for metastable amorphous GST; lower and higher fields are obtainable using different temperature dependent electrical conductivities. We use a 2D fixed out-of-plane-depth simulation to simulate an ovonic threshold switch in series with a Ge₂Sb₂Te₅ phase change memory cell to emulate a crossbar memory element. The simulation reproduces the pre-switching current and voltage characteristics found experimentally for the switch + memory cell, the isolated switch, and the isolated memory cell.