Progressive amorphization of GeSbTe phase-change material under electron beam irradiation
Abstract
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests but also make PCMs based random access memory a leading candidate for nonvolatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions first to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on a transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs.
- Publication:
-
APL Materials
- Pub Date:
- August 2019
- DOI:
- 10.1063/1.5102075
- arXiv:
- arXiv:1904.10601
- Bibcode:
- 2019APLM....7h1121J
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- APL Mater.7,081121(2019)