Crystal growth and quantum oscillations in the topological chiral semimetal CoSi
Abstract
We survey the electrical transport properties of single-crystalline, topological chiral semimetal CoSi grown via different methods. High-quality CoSi single crystals were found in the growth from a tellurium solution. The sample's high carrier mobility enables us to observe quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in its Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in density functional theory (DFT) calculations. A detailed analysis of the QOs reveals that the spin-orbit-coupling-induced band splitting is less than 2 meV near the Fermi level, one order of magnitude smaller than our DFT calculation. We also report a large phonon-drag-induced Nernst effect in CoSi at intermediate temperatures.
- Publication:
-
Physical Review B
- Pub Date:
- July 2019
- DOI:
- 10.1103/PhysRevB.100.045104
- arXiv:
- arXiv:1904.00630
- Bibcode:
- 2019PhRvB.100d5104X
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Phys. Rev. B 100, 045104 (2019)