A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics
Abstract
Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for transferring metal contacts that does not require aligned lithography. Using this technique, we fabricate vertical Schottky-junction $WS_2$ solar cells with Ag and Au as asymmetric work function contacts. Under laser illumination, we observe rectifying behavior and open-circuit voltage above 500 mV in devices with transferred contacts, in contrast to resistive behavior and open-circuit voltage below 15 mV in devices with evaporated contacts. One-sun measurements and device simulation results indicate that this metal transfer process could enable high-specific-power vertical Schottky-junction transition metal dichalcogenide photovoltaics, and we anticipate that this technique will lead to advances for two-dimensional devices more broadly.
- Publication:
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Science Advances
- Pub Date:
- December 2019
- DOI:
- 10.1126/sciadv.aax6061
- arXiv:
- arXiv:1903.08191
- Bibcode:
- 2019SciA....5.6061W
- Keywords:
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- Physics - Applied Physics
- E-Print:
- 32 pages, 6 figures, and 9 supplementary figures. Version 2 has updated introduction and abstract